Methods of forming capacitors

ABSTRACT

Methods of etching into silicon oxide-containing material with an etching ambient having at least 75 volume percent helium. The etching ambient may also include carbon monoxide, O 2  and one or more fluorocarbons. The openings formed in the silicon oxide -containing material may be utilized for fabrication of container capacitors, and such capacitors may be incorporated into DRAM.

RELATED PATENT DATA

This patent resulted from a continuation of U.S. patent application Ser.No. 11/631,664, which was filed Dec. 4, 2009, and which is herebyincorporated herein by reference; which resulted from a continuation ofU.S. patent application Ser. No. 11/638,223, which was filed Dec. 11,2006, which is now U.S. Pat. No. 7,648,872, and which is herebyincorporated herein by reference.

TECHNICAL FIELD

Methods of etching into silicon oxide-containing material, methods offorming container capacitors, and methods of forming DRAM arrays.

BACKGROUND

Semiconductor processing may frequently include an etch into or throughsilicon oxide-containing material. The silicon oxide-containing materialmay be undoped (and thus may consist of silicon dioxide (SiO₂)), or maybe doped (and thus may comprise, for example, one or more ofborophosphosilicate glass (BPSG), phosphosilicate glass (PSG), andfluorosilicate glass (FSG)).

An example application in which silicon oxide-containing material isetched is the formation of capacitor container openings. FIGS. 1-3illustrate a conventional method for forming capacitor containeropenings within silicon oxide-containing material.

Referring to FIG. 1, such shows a semiconductor construction 10 at apreliminary processing stage. Construction 10 comprises a basesemiconductor material 12 having a plurality of transistors 14, 16 and18 supported thereby. The base semiconductor material may comprise anysuitable semiconductor composition or combination of compositions; andmay, for example, comprise, consist essentially of or consist ofmonocrystalline silicon lightly background doped with appropriatedopant. The base may be a portion of a monocrystalline silicon wafer.

The base 12 may be considered to be a semiconductor substrate, or aportion of a semiconductor substrate. To aid in interpretation of theclaims that follow, the terms “semiconductive substrate” and“semiconductor substrate” are defined to mean any constructioncomprising semiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove.

Transistors 14, 16 and 18 comprise gates 24, 26 and 28, respectively.Such gates include stacks comprising gate dielectric 30, electricallyconductive gate material 32, and an electrically insulative cap 34. Theelectrically conductive gate material may comprise one or more of metal(such as titanium or tungsten), metal compounds (for instance, metalsilicide or metal nitride), and conductively-doped semiconductormaterial (for instance, conductively-doped silicon). The gate dielectricmay comprise silicon dioxide. The insulative caps may comprise one ormore of silicon nitride, silicon dioxide and silicon oxynitride.

Electrically insulative sidewall spacers 36 are along sidewalls of thegates. Such sidewall spacers may one or more of silicon dioxide, siliconnitride and silicon oxynitride.

Transistors 14, 16 and 18 comprise source/drain regions 40, 42, 44, 46and 48. Transistors 14 and 16 are paired, and share a commonsource/drain region 42. Transistor 18 may be part of another pairedtransistor set, so that source/drain region 48 is also a sharedsource/drain region. Source/drain regions 44 and 46 are electricallyisolated from one another by an isolation region 45 provided betweenthem. The isolation region is filled with insulative material, such as,for example, one or both of silicon dioxide and silicon nitride; and maycorrespond to a shallow trench isolation region.

Ultimately, shared source/drain regions 42 and 48 may be connected tobitlines, and the remaining source/drain regions 40, 44 and 46 may beconnected to capacitors. Accordingly, transistors 14, 16 and 18 may beincorporated into a dynamic random access memory (DRAM) array.

A silicon oxide-containing material 50 is over transistors 14, 16 and18. The silicon oxide-containing material may comprise a singlehomogeneous mass as shown, or may comprise multiple layers. A majorityof the silicon oxide-containing material may consist of one or more ofdoped oxides, such as BPSG, PSG or FSG; and in some applications anentirety of the silicon oxide-containing material 50 may consist of oneor more doped oxides. In some applications, at least a portion ofsilicon oxide-containing material 50 may consist of silicon dioxide. Forinstance, a lower portion of silicon oxide-containing material 50 may bea layer of silicon dioxide, and the remainder of siliconoxide-containing material 50 may be one or more doped oxides.

A patterned mask 52 is formed over material 50. The patterned mask has aplurality of openings 54, 56 and 58 extending therethrough. Thepatterned mask may comprise, consist essentially of or consist ofcarbon-containing material, such as transparent carbon, amorphous carbonand/or photoresist.

Referring to FIG. 2, openings 54, 56 and 58 are extended through siliconoxide-containing material 50 to source/drain regions 40, 44 and 46,respectively. The openings may be extended through the siliconoxide-containing material with an etch utilizing C₄F₈ (flowed at about60 standard cubic centimeters per minute (sccm)), argon (flowed at about1100 sccm), oxygen (flowed at about 25 sccm) and C₄F₆ (flowed at about 2sccm). Such etch may be conducted under a pressure of about 30millitorr, utilizing a plasma power of about 2100 watts at about 60megahertz, and a substrate bias of about 3500 watts at about 2megahertz.

A problem with an etch as described above is that it may create theshown bowing within openings 56 and 58, which creates widened regions 60and 62. Such widened regions thin a sidewall between them so thatopenings 56 and 68 touch or nearly touch at a location 63. Also, theetch may lead to so-called “twisting” within the openings such that theinternal periphery of the openings appears to twist along the verticallength of the openings.

Referring to FIG. 3, masking material 52 (FIG. 2) is removed andcapacitor materials 70, 72 and 74 are formed within the openings 54, 56and 58. Capacitor material 70 is a first electrode material, capacitormaterial 72 is a dielectric material, and capacitor material 74 is asecond electrode material. Materials 70 and 74 are electricallyconductive, and may comprise one or more of metal, metal compounds, andconductively-doped semiconductor materials. Material 72 is electricallyinsulative, and may comprise one or more of silicon dioxide, siliconnitride, and various high-k materials.

Materials 70, 72 and 74 are intended to form capacitor constructions 80,82 and 84 within openings 54, 56 and 58. Unfortunately, the bowingwithin openings 56 and 58 may cause capacitors 82 and 84 to be shortedto one another.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-3 illustrate semiconductor wafer fragments at variousconventional processing stages for forming capacitors of a DRAM array.

FIGS. 4-7 illustrate semiconductor wafer fragments at various processingstages in accordance with an embodiment of the invention for formingopenings through a silicon oxide-containing material, and for formingcapacitors within such openings.

FIG. 8 diagrammatically illustrates a portion of an etching chamberwhich may be utilized in an embodiment of the invention.

DETAILED DESCRIPTION

Embodiments of the invention may utilize new etching chemistries toavoid bowing and other problems associated with formation of high aspectratio openings using conventional processing. Openings formed with suchnew etching chemistries may be utilized for fabrication of containercapacitors, and such capacitors may be incorporated into DRAM.

FIGS. 4-7 illustrate an embodiment of the invention. In referring toFIGS. 4-7, similar numbering will be used as was utilized in describingthe conventional process of FIGS. 1-3, where appropriate.

Referring initially to FIG. 4, such shows a semiconductor construction10 similar to that discussed above with reference to FIG. 1. Theconstruction 10 of FIG. 4 comprises the semiconductor base 12,transistors 14, 16 and 18, isolation region 45, silicon oxide-containingmaterial 50, and patterned masking material 52 discussed above withreference to FIG. 1.

Gaps (or openings) 54, 56 and 58 extend through patterned maskingmaterial 52. A difference between the construction of FIG. 4 and that ofFIG. 1 may be that gaps 54, 56 and 58 have different dimensions in FIG.4 than in FIG. 1. Such difference in dimensions may be used to optimizethe construction of FIG. 4 for different etching conditions than theconventional conditions utilized to treat the construction of FIG. 1.

Referring to FIG. 5, construction 10 is subjected to an etch whichextends openings 54, 56 and 58 through silicon oxide-containing materialto source/drain regions 40, 44 and 46, respectively. The etch forms theopenings within silicon oxide-containing material 50 to be more taperedthan the openings formed by the conventional etching conditions (theopenings of FIG. 2), and also avoids problems associated with bowing andtwisting. In some embodiments, bowing and twisting may be eliminated.Even if the bowing and twisting are not eliminated, the tapering of theopenings may create additional spacing between the openings as theopenings penetrate deeper into silicon oxide-containing material 50,which may avoid overlap of adjacent openings. In some embodiments,etching conditions may be chosen such that the tapering is lessenedrelative to that shown in FIG. 5; and in some embodiments the etchingconditions may form sidewalls that are about as vertical as those formedby conventional processes.

The etch utilized to extend openings 54, 56 and 58 through siliconoxide-containing material 50 may be a plasma etch utilizing a highconcentration of helium. A plasma etch may have a chemical-based partand a physical-based part. The chemical-based part of the etch is due tochemical interaction of etching components with material to cause areaction which removes the material. The physical-based part of the etchis due to impact of energetic etch components into the material todisplace portions the material (in some ways analogous tosand-blasting). Helium is a lighter element than the argon utilized inthe conventional processing of FIGS. 1-3, and this may cause thephysical etch component associate with helium to be less than thatassociated with argon.

The etching may be conducted in an etching chamber, such as the chamber200 diagrammatically illustrated in FIG. 8. Such chamber has a substrateholder 202 provided therein which retains a semiconductor substrate 10.The chamber has a region above the substrate within which a plasma 204is maintained. Etching components are flowed into the chamber asdiagrammatically illustrated by arrow 206, and products and unreactedetching components are flowed out of the chamber as diagrammaticallyillustrated by arrow 208. There may be a flow of materials through anetching chamber during an etching process. The materials within theetching chamber during the etching process may be referred to as anetching ambient. The materials within the etching chamber may be in agas or plasma state, and accordingly may be referred to as an etchingfluid.

The etching ambient utilized during the etch through siliconoxide-containing material 50 of FIG. 5 may comprise at least about 75volume percent helium. Additionally, the etching ambient may comprise O₂and one or more fluorocarbons; with the fluorocarbons and O₂ beingutilized for a chemical-based part of the etch. The fluorocarbons mayinclude C₄F₈ and C₄F₆.

If the etching ambient comprises only helium, fluorocarbons and O₂, itis found that there may be poor selectivity of the etch for siliconoxide-containing material relative to masking material 52. This may bedue to fluorine being released during the etching process and attackingthe masking material. It is also found that inclusion of CO (carbonmonoxide) within the etching ambient may improve the selectivity of theetch for the silicon oxide-containing material relative to the maskingmaterial. Such may be due to the CO scavenging released fluorine.Utilization of CO may be particularly useful in applications in whichmasking material 52 comprises carbon, such as when masking material 52consists essentially of, or consists of amorphous carbon or transparentcarbon. The CO may be provided within the etching ambient to aconcentration of at least about 5 volume percent.

An embodiment of the etch utilized to etch through siliconoxide-containing material 50 utilizes flow of the following through areaction chamber:

-   -   from about 6 sccm to about 100 sccm of one or more fluorocarbons        (which may be about 60 sccm C₄F₈ and about 2 sccm C₄F₆);    -   from about 100 sccm to about 1500 seem of helium (which may be        about 1000 sccm He);    -   from about 1 seem to about 500 seem of CO (which may be about        300 seem CO); and    -   from about 2 seem to about 40 seem of O₂ (which may be about 25        seem O₂).

The etch may be conducted with a pressure of the ambient (in otherwords, a pressure within the reaction chamber) of from about 10millitorr to about 30 millitorr (for instance, about 30 millitorr); aplasma power of from about 1500 watts to about 3000 watts, (forinstance, about 2100 watts); and a substrate bias of from about 2000watts to about 5000 watts, (for instance, about 3500 watts).

In some embodiments, the etching ambient may consist essentially ofhelium, one or more fluorocarbons, CO and O₂ for at least a portion ofan etch. The helium, one or more fluorocarbons, CO and O₂ are thematerials flowed into the chamber during the etch, but the compositionof the etching ambient may change as products are released during theetching process. In some embodiments, the helium, one or morefluorocarbons, CO and O₂ are the only materials flowed into the chamber;and accordingly the etching materials flowed in the chamber may beconsidered to consist of the helium, one or more fluorocarbons, CO andO₂.

The silicon oxide-containing material 50 may, as discussed above withreference to FIG. 1, comprise doped silicon oxide-containing material(such as BPSG, PSG or FSG) and/or undoped silicon dioxide. In someembodiments, material 50 may consist of doped silicon oxide-containingmaterial, and in other embodiments material 50 may consist of SiO₂. Inyet other embodiments, material 50 may comprise a thick mass of dopedsilicon oxide-containing material over a layer consisting of SiO₂.

Although the etch of FIG. 5 is shown extending all the way to thesource/drain regions, it is to be understood that in other embodimentsconductive pedestals could be formed over the source/drain regions, andthe etch could then be conducted to extend to upper surfaces of suchconductive pedestals.

The openings formed within silicon oxide-containing material 50 may behigh aspect ratio openings, and accordingly may have aspect ratios of atleast 20:1, and in some embodiments may have aspect ratios of 24:1 orhigher.

Referring to FIG. 6, masking material 52 is removed. Such removal may beaccomplished with any suitable etch, or combination of etches, and mayfor example be accomplished with a dry strip process, such as a striputilizing O₂.

Referring to FIG. 7, the openings 54, 56 and 58 are utilized ascontainers of container capacitors. Specifically, first capacitorelectrode material 70, dielectric material 72 and second capacitorelectrode material 74 are formed within the openings to form containercapacitors 80, 82 and 84. Such container capacitors are directly oversource/drain regions 40, 44 and 46, respectively. In some embodiments,silicon oxide-containing material 50 may be at least about 1 micronthick, and accordingly the containers of the container capacitors may beat least about 1 micron deep. Accordingly, tall, thin capacitors may beformed within the high aspect ratio openings 54, 56 and 58. The problemof adjacent capacitors shorting to another may be avoided utilizing theetching conditions discussed above with reference to FIG. 5.

Capacitors 80, 82 and 84 may be incorporated into a DRAM array.Specifically, shared source/drain regions 42 and 48 may be connected tobitlines 100 and 102 (diagrammatically illustrated in FIG. 7), andtransistor gates 24, 26 and 28 may be comprised by wordlines. Each ofthe individual transistors 14, 16 and 18 may be considered to comprisepaired source/drain regions (for instance, transistor 14 comprisespaired source/drain regions 40 and 42). Further, each of the individualtransistors has one of the paired source/drain regions electricallycoupled with a capacitor (for instance, capacitor 80 is electricallycoupled with source/drain region 40), and has the other of the pairedsource/drain regions electrically coupled with a bitline (for instance,source/drain region 42 is electrically coupled with bitline 100).

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the inventionis not limited to the specific features shown and described, since themeans herein disclosed comprise preferred forms of putting the inventioninto effect. The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A method of forming a capacitor, comprising: forming siliconoxide-containing material over a semiconductor base; utilizing etchingmaterials and a patterned mask to form an opening that extends throughthe silicon oxide-containing material to the semiconductor base, theetching materials consisting of helium, carbon monoxide, oxygen, one ormore fluorocarbons, and O₂; the opening being wider at a top of thesilicon oxide-containing material and narrower at a bottom of thesilicon oxide-containing material, and having sloped sidewalls thatextend from the bottom of the silicon oxide-containing material to thetop of the silicon oxide-containing material; forming first capacitorelectrode material within the opening; forming dielectric materialwithin the opening and over the first capacitor electrode material; andforming second capacitor electrode material within the opening and overthe dielectric material; the first and second capacitor electrodematerials, together with the dielectric material, forming a capacitorwithin the opening.
 2. The method of claim 1 wherein the patterned maskcomprises transparent carbon.
 3. A method of forming a plurality ofcapacitors, comprising: providing a semiconductor construction within anetching chamber, the semiconductor construction comprising conductiveregions; forming silicon oxide-containing material over the conductiveregions; forming a patterned carbon-containing mask over the siliconoxide-containing material; the patterned carbon-containing mask having aplurality of openings extending therethrough and comprising transparentcarbon; flowing etching materials into the chamber, the etchingmaterials consisting of helium, carbon monoxide, oxygen, one or morefluorocarbons, and O₂; utilizing the etching materials to extend theopenings into the silicon oxide-containing material to form containersin the silicon oxide-containing material; the containers being directlyover the conductive regions; and forming first capacitor electrodematerial and dielectric material within the containers, and formingsecond capacitor electrode material spaced from the first capacitorelectrode material by the dielectric material; the first and secondcapacitor electrode materials, together with the dielectric material,forming a plurality of capacitors within the plurality of the openings;the capacitors being electrically coupled with the conductive regions.4. The method of claim 3 wherein the silicon oxide-containing materialcomprises doped silicon oxide.
 5. The method of claim 3 wherein thesilicon oxide-containing material consists of doped silicon oxide. 6.The method of claim 3 wherein the flowing of the etching materials intothe chamber comprises flow rates of: from about 6 sccm to about 100 sccmof the one or more fluorocarbons; from about 100 sccm to about 1500 sccmof the helium; and from about 1 sccm to about 500 sccm of the carbonmonoxide.
 7. The method of claim 6 further comprising providing the O₂at a flow rate of from about 2 sccm to about 40 sccm.
 8. The method ofclaim 3 further comprising formulating the one or more fluorocarbons toconsist of C₄F₈ and C₄F₆.